A transistor is made by fabricating two PN junctions that are very close to each other on a semiconductor substrate. The two PN junctions divide the entire semiconductor into three parts, with the middle part being the base region and the two sides being the emitter and collector regions. There are two arrangements: PNP and NPN.
The transistor has a current amplification function, which essentially means that the transistor can control the large change in collector current with a small change in base current. This is the most fundamental and important characteristic of a transistor.
Schottky diode, also known as Schottky barrier diode (SBD), is a low-power, ultra high speed semiconductor device.
Schottky diodes are divided into two packaging forms: lead and surface mount (patch). Schottky diodes with lead type packaging are commonly used as high-frequency high current rectifier diodes, freewheeling diodes, or protective diodes.
In general, there are three numbers in the naming of rectifier bridges. The first number represents the rated current, A; the last two numbers represent the rated voltage (number * 100), V
The rectifier bridge stack product is composed of four rectifier silicon chips connected in a bridge configuration and encapsulated with insulating plastic. The high-power rectifier bridge is encapsulated with a zinc metal shell outside the insulation layer to enhance heat dissipation.
